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Dynamic Junction Temperature Evaluation: On-State Voltage Measurement Device vs. IR Thermography

  • Temperature monitoring of power semiconductors is essential to ensure component reliability and longevity. During the operation of an inverter, this is typically done using infrared thermography or temperature sensors placed nearby the chip. An alternative method utilizes the chip itself as a temperature sensor by exploiting the fact that the on-state voltage is temperature-dependent. Precise measurement of this voltage allows for an accurate evaluation of the chip temperature. During pulsed operation, a specialized measurement circuit, called Isoclipper, is used, which suppresses high switching voltages, allowing high-resolution observation of the conduction voltage. In combination with a detailed calibration and a modified inverter control, a correlation with an IR camera within a range of 3 K can be achieved, as verified through an experimental setup.

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Metadaten
Author:Max PlumeierORCiD, Nigel Springett, Paul-Jona HechORCiD, Constantin SchlakORCiD, Benjamin SahanORCiDGND
URN:urn:nbn:de:bsz:960-opus4-36809
DOI:https://doi.org/10.25968/opus-3680
DOI original:https://doi.org/10.30420/566541158
ISBN:978-3-8007-6541-6
Parent Title (German):PCIM Conference 2025 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management 6 – 8 Mai 2025, Nuremberg
Publisher:VDE
Document Type:Conference Proceeding
Language:German
Year of Completion:2025
Publishing Institution:Hochschule Hannover
Release Date:2025/09/04
GND Keyword:LeistungshalbleiterGND; InfrarotthermographieGND; TemperatursensorGND; SchaltspannungGND
First Page:1217
Last Page:1224
Link to catalogue:1946499277
Institutes:Fakultät I - Elektro- und Informationstechnik
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Licence (German):License LogoUrheberrechtlich geschützt